TEMAH is used as a precursor for atomic layer deposition(ALD) of conformal thin films of hafnium oxide (HfO
2) and hafnium zirconium oxide (Hf
1-xZrxO
2),
[1] which are used as dielectric films in semiconductor fabrication because of their high dielectric constants.
TEMAH is well-suited for ALD because its adsorption is self-limiting on a number of substrates including glass, indium-tin oxide(ITO), Si(100), and two-dimensional materials like MoS
2.
[2][3] TEMAH also conveniently reacts with either water or ozone as the oxygen-source in the ALD process.